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| APM9953 P-Channel Enhancement Mode MOSFET Features * -20V/-3A , RDS(ON)=75m(typ.) @ VGS=-10V * * * RDS(ON)=90m(typ.) @ VGS=-4.5V Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SOP-8 Package Pin Description 5 / 5 / ! " & % $ # , , , , SO - 8 5 5 Applications * Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. / / , , , , P-Channel MOSFET Ordering and Marking Information APM 9953 H a n d lin g C o d e Tem p. R ange P a c k ag e C o d e P ackage C ode K : S O -8 O p e ra tin g J u n c tio n T e m p . R a n g e C : -5 5 to 1 5 0 C H a n d lin g C o d e TU : Tube TR : Tape & R eel A P M 9953 K : A P M 9953 XXXXX X X X X X - D a te C o d e Absolute Maximum Ratings Symbol VDSS VGSS ID * (TA = 25C unless otherwise noted) Rating -20 10 -3 -12 Unit V A Parameter Drain-Source Voltage Gate-Source Voltage Maximum Drain Current Continuous Maximum Drain Current Pulsed IDM ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.1 - July., 2003 1 www.anpec.com.tw * Surface Mounted on FR4 Board, t 10 sec. APM9953 Absolute Maximum Ratings Cont. Symbol PD TJ TSTG * RJA (TA = 25C unless otherwise noted) Rating Unit W C C C/W Parameter Maximum Power Dissipation Maximum Junction Temperature Storage Temperature Range Thermal Resistance Junction to Ambient TA=25C TA=100C 2.5 1.0 150 -55 to 150 62.5 Electrical Characteristics Symbol Static BVDSS IDSS VGS(th) IGSS RDS(ON) VSD = > = (TA = 25C unless otherwise noted) APM9953 Typ. Max. Min. -20 -1 -0.5 -0.7 76 93 -0.7 5.3 1.04 0.62 13 36 45 37 552 118 76 pF 21.5 56 69.5 57.5 -1 100 100 125 -1.3 6.9 nC Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage Test Condition Unit VGS=0V , IDS=-250A VDS=-16V , VGS=0V VDS=VGS , IDS=-250A VGS=8V , VDS=0V VGS=-10V , IDS=-3A VGS=-4.5V , IDS=-2A ISD=-0.5A , VGS=0V VDS=-10V , IDS=-3A VGS=-4.5V VDD=-10V , IDS=-3A , VGEN=-4.5V , RG=6 V A V nA m V Dynamic Qg Total Gate Charge Qgs Qgd td(ON) Tr td(OFF) Tf Ciss Coss Crss Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance ns VGS=0V Output Capacitance VDS=-15V Reverse Transfer Capacitance Frequency=1.0MHz Notes a b : Pulse test ; pulse width 300s, duty cycle 2% : Guaranteed by design, not subject to production testing Copyright ANPEC Electronics Corp. Rev. A.1 - July., 2003 2 www.anpec.com.tw APM9953 Typical Characteristics 12 10 Output Characteristics -VGS= 3,4,5,6,7,8,9,10V 12 10 Transfer Characteristics -ID-Drain Current (A) -ID-Drain Current (A) 8 6 4 2 0 -VGS=1.5V -VGS=1V 0 1 2 3 4 5 6 7 8 9 10 -VGS=2V 8 6 4 2 0 0.4 Tj=125 C Tj=25 C Tj=-55 C o o o 0.8 1.2 1.6 2.0 2.4 2.8 3.2 -VDS - Drain-to-Source Voltage (V) -VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 1.50 On-Resistance vs. Drain Current 0.11 -VGS(th)-Threshold Voltage (V) (Normalized) -IDS =250A 1.25 1.00 0.75 0.50 0.25 -50 RDS(ON)-On-Resistance () 0.10 0.09 0.08 0.07 0.06 -VGS=4.5V -VGS=10V -25 0 25 50 75 100 125 150 0 2 4 6 8 10 Tj - Junction Temperature (C) -ID - Drain Current (A) Copyright ANPEC Electronics Corp. Rev. A.1 - July., 2003 3 www.anpec.com.tw APM9953 Typical Characteristics On-Resistance vs. Gate-to-Source Voltage 0.150 1.4 On-Resistance vs. Junction Temperature -VGS = 4.5V -IDS = 2A RDS(ON)-On-Resistance () 0.135 0.120 0.105 RDS(ON)-On-Resistance () (Normalized) -ID= 3A 1.3 1.2 1.1 1.0 0.9 0.8 0.7 -50 0.090 0.075 0.060 0 1 2 3 4 5 6 7 8 9 10 -25 0 25 50 75 100 125 150 -VGS - Gate-to-Source Voltage (V) TJ - Junction Temperature (C) Gate Charge 5 780 Capacitance Frequency=1MHz Ciss -VGS-Gate-Source Voltage (V) 4 -VDS= 4.5V -IDS= 2A 700 600 Capacitance (pF) 3 500 400 300 200 100 Coss 2 1 0 Crss 0 1 2 3 4 5 6 0 4 8 12 16 20 QG - Gate Charge (nC) -VDS - Drain-to-Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.1 - July., 2003 4 www.anpec.com.tw APM9953 Typical Characteristics Source-Drain Diode Forward Voltage 10 12 Single Pulse Power 40 -IS-Source Current (A) 30 Tj=150 C 1 o Tj=25 C o Power (W) 10 0.1 0.2 0.4 0.6 0.8 1.0 1.2 0 0.01 0.1 1 10 30 -VSD -Source-to-Drain Voltage (V) Time (sec) Normalized Thermal TransientImpedence, Junction to Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle=0.5 D=0.2 0.1 D=0.1 D=0.05 D=0.02 SINGLE PULSE 1.Duty Cycle, D= t1/t2 2.Per Unit Base=RthJA=62.5 C/W 3.TJM-TA=PDMZthJA 4.Surface Mounted o 0.01 1E-4 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.1 - July., 2003 5 www.anpec.com.tw 20 APM9953 Packaging Information SOP-8 pin ( Reference JEDEC Registration MS-012) E H e1 D e2 A1 A 1 L 0.004max. Dim A A1 D E H L e1 e2 1 Mi ll im et er s Min. 1. 35 0. 10 4. 80 3. 80 5. 80 0. 40 0. 33 1. 27BSC 8 Max . 1. 75 0. 25 5. 00 4. 00 6. 20 1. 27 0. 51 Min. 0. 053 0. 004 0. 189 0. 150 0. 228 0. 016 0. 013 0.015X45 Inche s Max . 0. 069 0. 010 0. 197 0. 157 0. 244 0. 050 0. 020 0. 50BSC 8 Copyright ANPEC Electronics Corp. Rev. A.1 - July., 2003 6 www.anpec.com.tw APM9953 Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. (IR/Convection or VPR Reflow) Reflow Condition Reference JEDEC Standard J-STD-020A APRIL 1999 temperature Peak temperature 183C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183C to Peak) Preheat temperature 125 25C) Temperature maintained above 183C Time within 5C of actual peak temperature Peak temperature range Ramp-down rate Time 25C to peak temperature 3C/second max. 120 seconds max. 60 ~ 150 seconds 10 ~ 20 seconds 220 +5/-0C or 235 +5/-0C 6 C /second max. 6 minutes max. VPR 10 C /second max. 60 seconds 215~ 219C or 235 +5/-0C 10 C /second max. Package Reflow Conditions pkg. thickness 2.5mm and all bags Convection 220 +5/-0 C VPR 215-219 C IR/Convection 220 +5/-0 C pkg. thickness < 2.5mm and pkg. volume 350 mm pkg. thickness < 2.5mm and pkg. volume < 350mm Convection 235 +5/-0 C VPR 235 +5/-0 C IR/Convection 235 +5/-0 C www.anpec.com.tw Copyright ANPEC Electronics Corp. Rev. A.1 - July., 2003 7 APM9953 Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245C,5 SEC 1000 Hrs Bias @ 125C 168 Hrs, 100% RH, 121C -65C ~ 150C, 200 Cycles Carrier Tape & Reel Dimensions t E Po P P1 Bo D W F Ao D1 T2 Ko J A C B T1 Application SOP-8 A 3301 B 62 1.5 C 12.75 + 0.1 5 J 2 + 0.5 T1 12.4 +0.2 T2 2 0.2 W 12 + 0.3 - 0.1 Bo 5.2 0.1 P 8 0.1 E 1.75 0.1 F D D1 Po P1 Ao 1.55+ 0.25 4.0 0.1 2.0 0.1 6.4 0.1 5.5 0.1 1.550.1 Ko t 2.1 0.1 0.30.013 (mm) Copyright ANPEC Electronics Corp. Rev. A.1 - July., 2003 8 www.anpec.com.tw APM9953 Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.1 - July., 2003 9 www.anpec.com.tw |
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